1N4830 technical specifications american microsemiconductor, inc. 133 kings road, madison, nj 07940 tel. 973 - 377 - 9566 fax. 973 - 377 - 3078 page 1 of 1 iso9001:2008, as/en/jisq 9100 rev. c certificate no. 45325 americanmicrosemi.com | order online ? h ermetically sealed glass package do - 35 ? high reverse breakdown and low leakage ? e xcellent low voltage regulation ? p lanar passivated die elements value unit military / high rel n @ i r test cond. - -- ma v fm max. f orward voltage 2 .7 v @ i fm test cond. 100 ma @ i rm max. rev. current 1 00 n a @ v r test cond. 20 v semiconductor material s ilicon package style do - 35 mounting style any a l d 1 d 2 mm 25.40 0 4.44 0 0.457 /0.559 2.03 0 inches 1.000 0.175 0. 018/0.022 0.0 8 0 these axial lead diodes represent configurations of one to four p- n junctions in series which may be used in any application requiring tight tolerance, low voltage levels versus current. this method of low voltage regulation is comparatively s uperior in dynamic impedence than low voltage zeners where tunneling instead of avalanche current is dominant. typical applications include use as signal limiters, level shifters in transistor logic, meter protectors, and low voltage regulators. diodes > forward reference diodes
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